Ion Beam Laboratory Research Scientist
Job posting number: #7091262 (Ref:680202)
Posted: December 22, 2021
Job DescriptionThis posting will be open for application submissions for a minimum of seven (7) calendar days, including the ‘posting date’. Sandia reserves the right to extend the posting date at any time. : Sandia demonstrates its commitment to public safety in the national interest by requiring that all new hires be fully vaccinated or have an approved medical or religious accommodation before commencing employment. The requirement also applies to those who are telecommuting and working virtually. Any concerns about the ability to meet this requirement should be directed to HR Solutions at (505) 284-4700. : The Ion Beam Laboratory (IBL) is seeking a hard working staff scientist with expertise and curiosity about exploring basic science research in the field of in-situ transmission electron microscopy (TEM) and in-situ scanning electron microscopy (SEM) in conjunction with ion irradiation. You will use these capabilities to explore radiation effects in semiconductor materials and devices, characterize structural materials, and investigate new avenues for doing material science with defect engineering and nanomechanics. Join our multidisciplinary team to perform innovative experiments and modeling based around Sandia’s ion accelerator capabilities. This position will support these key areas of research at the Ion Beam Laboratory: + In-situ operation of the combined heavy ion and TEM/SEM end-stations located on the 6 MV Tandem Accelerator. These instruments have capabilities for unprecedented exploration and understanding of radiation induced defects in a wide range of materials systems. Additionally, a wide selection of holders and accessories on these tools expand the imaging capability to include nanomechanical straining, micro-indentation, laser heating, experiments at various temperatures, electrical measurements, liquid-cell electrochemistry, and others. + Ion beam irradiation of semiconductor materials to aid a series of ongoing projects using heavy ions to simulate neutron displacement damage and combined ion plus electron exposure to simulate a combined neutron plus gamma environment. These two capabilities allow Sandia’s Ion Beam Laboratory to provide unprecedented material behavior insight and explore the fundamental science questions surrounding radiation induced defects in a wide range of semiconductors from Si, SiC, GaN, AlGaN, etc. On any given day, you may be called on to: + Develop new research programs using the capabilities of Sandia’s Ion Beam Laboratory to address critical mission needs. For example, the development of new and improved experimental and modeling capabilities to understand and predict radiation response in semiconductor materials and devices including high-impact research towards understanding atomistic- and nano-scale phenomena and their influence on material behavior in extreme environments. + Perform experiments and collaborate with diverse groups working with a wide array of predictive modeling, device fabrication and in-house material/device testing capabilities including in-situ techniques such as deep level transient spectroscopy (DLTS), photoluminescence (PL), electroluminescence (EL), transient microwave reflectance (TMR), electron and ion beam induced charge collection (EBIC and IBIC) + Generate research publications and present at leading technical conferences Sandia Job Title: Research & Development S&E Physics
+ Master's or Ph.D. in Physics, Materials Science, Electrical Engineering, or a related field with at least 1 year of postdoctoral or industrial experience + A history of publication of results in peer-reviewed professional journals and presentations at appropriate scientific conferences + Experience leading research project as evidenced by track record of acquiring funding from either internal or external agencies and conducting independent research + Experience with nanoscale materials characterization and high-resolution transmission electron microscopy and scanning electron microscopy + Able to acquire and maintain a DOE Q-level security clearance
+ PhD in Physics, Materials Science, Electrical Engineering, or related field + Research background with in-situ TEM/SEM experiments for ion irradiation and implantation and/or nanoscale mechanical property testing including in-situ heating, liquid-cell electrochemistry, electrical characterization, diffraction and defect analysis, tomography, and ultrafast or dynamic TEM + Research background in semiconductors defects effects in devices and materials, semiconductor device physics, and/or TCAD modeling of devices + Experience using ion beams (100keV – multi-MeV) for materials analysis, modification and/or radiation effects testing + Experience with programming languages such as Python, Visual C and LabView or experience with software-hardware interaction + Experience with developing safe operating procedures for potentially high hazard systems and/or operations in a multi-user facility + Upbeat, hard working individual who is passionate about problem solving with superb analytical skills and proven interpersonal skills
The Radiation-Solid Interaction Department operates the Ion Beam Laboratory (IBL). This pioneering facility houses 7 major accelerators: a 6 MV Tandem, a 3 MV Pelletron, a 1 MV Tandem, a 400 kV implanter, 35 kV Helium Ion Microscope and both a 35 kV and 100 kV focused ion beam system with mass velocity filter. Other experimental facilities include focused micro beam lines on all the major accelerators. The IBL engages in three major research thrusts: + Understanding the performance of materials in radiation environments. These projects impact the performance of microelectronics in space and other hostile environments, as well as cladding materials in nuclear reactor and storage environments. + Developing and applying novel ion beam techniques to precisely measure materials compositions. Applications in this area include mapping hydrogen isotopes in fusion wall material and measuring the composition of thin complex materials such as transition metal oxides. + Exploring the materials science of defects in solids. This broad area includes single ion implants for quantum applications, anomalous grain growth in nanograined materials, hydride formation under irradiation, and nanomechanical responses of materials. In each thrust the department provides unrivaled capabilities to multidisciplinary teams with an interest in publishing high quality research and applying the results to problems of national interest. Our team is committed to nurturing a culture compatible with a broad group of people and perspectives in accordance with the changing makeup of the workforce. In support of this vision, our center actively recruits applicants from diverse groups of backgrounds and fosters an inclusive community. Join us and work towards your goals while making a difference!
Sandia National Laboratories is the nation’s premier science and engineering lab for national security and technology innovation, with teams of specialists focused on cutting-edge work in a broad array of areas. Some of the main reasons we love our jobs:• Challenging work with amazing impact that contributes to security, peace, and freedom worldwide• Extraordinary co-workers• Some of the best tools, equipment, and research facilities in the world• Career advancement and enrichment opportunities• Flexible work arrangements for many positions include 9/80 (work 80 hours every two weeks, with every other Friday off) and 4/10 (work 4 ten-hour days each week) compressed workweeks, part-time work, and telecommuting (a mix of onsite work and working from home)• Generous vacations, strong medical and other benefits, competitive 401k, learning opportunities, relocation assistance and amenities aimed at creating a solid work/life balance* World-changing technologies. Life-changing careers. Learn more about Sandia at: http://www.sandia.gov*These benefits vary by job classification.
Sandia is required by DOE to conduct a pre-employment drug test and background review that includes checks of personal references, credit, law enforcement records, and employment/education verifications. Applicants for employment need to be able to obtain and maintain a DOE Q-level security clearance, which requires U.S. citizenship. If you hold more than one citizenship (i.e., of the U.S. and another country), your ability to obtain a security clearance may be impacted. Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by DOE, resulting in the inability to perform the duties assigned and subsequent termination of employment.
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, or veteran status and any other protected class under state or federal law. Job ID: 680202
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability, or veteran status.